IRFH4213Dpbf 1 www.irf.com ? 2013 international rectifier may 20, 2013 hexfet ? power mosfet base part number package type standard pack orderable part number form quantity IRFH4213Dpbf pqfn 5mm x 6 mm tape and reel 4000 IRFH4213Dtrpbf v dss 25 v r ds(on) max (@ v gs = 10v) 1.35 m ? (@ v gs = 4.5v) 1.90 qg (typical) 25 nc i d (@t c (bottom) = 25c) 100 ? a pqfn 5x6 mm notes ? through ? are on page 8 absolute maximum ratings parameter max. units v gs gate - to - source voltage 20 v i d @ t a = 25c continuous drain current, v gs @ 10v 40 a i d @ t c(bottom) = 25c continuous drain current, v gs @ 10v 208 ?? i d @ t c(bottom) = 100c continuous drain current, v gs @ 10v 131 ?? i d @ t c(bottom) = 25c continuous drain current, v gs @ 10v (source bonding technology limited) 100 ? i dm pulsed drain current ? 400 p d @t a = 25c power dissipation ? 3.6 w p d @t c(bottom) = 25c power dissipation 96 linear derating factor ? 0.029 w/c t j operating junction and - 55 to + 150 c t stg storage temperature range applications ? synchronous rectifier mosfet for synchronous buck converters features benefits low r dson (<1.35m ? ) lower conduction losses schottky intrinsic diode with low forward voltage lower switching losses low thermal resistance to pcb (<1.3c/w) enable better thermal dissipation low profile (<0.9 mm) results in increased power density industry - standard pinout ? multi - vendor compatibility compatible with existing surface mount techniques easier manufacturing rohs compliant, halogen - free environmentally friendlier msl1, industrial qualification increased reliability downloaded from: http:///
IRFH4213Dpbf 2 www.irf.com ? 2013 international rectifier may 20, 2013 d s g static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions bv dss drain - to - source breakdown voltage 25 CCC CCC v v gs = 0v, i d = 1.0ma ? bv dss / ? t j breakdown voltage temp. coefficient CCC 21 CCC mv/c reference to 25c, i d = 10ma r ds(on) static drain - to - source on - resistance CCC 1.10 1.35 m ? v gs = 10v, i d = 50a ? CCC 1.50 1.90 v gs = 4.5v, i d = 50a ? v gs(th) gate threshold voltage 1.1 1.6 2.1 v v ds = v gs , i d = 100a ? v gs(th) gate threshold voltage coefficient CCC - 4.5 CCC mv/c v ds = v gs , i d = 10ma i dss drain - to - source leakage current CCC CCC 250 a v ds = 20v, v gs = 0v i gss gate - to - source forward leakage CCC CCC 100 na v gs = 20v gate - to - source reverse leakage CCC CCC - 100 v gs = - 20v gfs forward transconductance 340 CCC CCC s v ds = 10v, i d = 50a q g total gate charge CCC 55 CCC nc v gs = 10v, v ds = 13v, i d = 50a q g total gate charge CCC 25 38 q gs1 pre - vth gate - to - source charge CCC 9.4 CCC v ds = 13v q gs2 post - vth gate - to - source charge CCC 4.1 CCC nc v gs = 4.5v q gd gate - to - drain charge CCC 9.4 CCC i d = 50a q godr gate charge overdrive CCC 2.1 CCC q sw switch charge (q gs2 + q gd ) CCC 13.5 CCC q oss output charge CCC 27 CCC nc v ds = 16v, v gs = 0v r g gate resistance CCC 1.5 CCC ? t d(on) turn - on delay time CCC 14 CCC v dd = 13v, v gs = 4.5v t r rise time CCC 30 CCC ns i d = 50a t d(off) turn - off delay time CCC 18 CCC r g =2.0 ? t f fall time CCC 12 CCC c iss input capacitance CCC 3520 CCC v gs = 0v c oss output capacitance CCC 1070 CCC pf v ds = 13v c rss reverse transfer capacitance CCC 250 CCC ? = 1.0mhz avalanche characteristics parameter typ. max. e as single pulse avalanche energy ? CCC 180 i ar avalanche current ? CCC 50 diode characteristics parameter min. typ. max. units conditions i s continuous source current CCC CCC 100 ? a mosfet symbol (body diode) showing the i sm pulsed source current CCC CCC 400 integral reverse (body diode) ? p - n junction diode. v sd diode forward voltage CCC CCC 0.8 v t j = 25c, i s = 50a, v gs = 0v ? t rr reverse recovery time CCC 26 37 ns t j = 25c, i f = 50a, v dd = 13v q rr reverse recovery charge CCC 35 53 nc di/dt = 260a/s ? thermal resistance parameter typ. max. units r ? jc (bottom) junction - to - case ? CCC 1.3 r ? jc (top) junction - to - case ? CCC 21 c/w r ? ja junction - to - ambient ? CCC 35 r ? ja (<10s) junction - to - ambient ? CCC 21 downloaded from: http:///
IRFH4213Dpbf 3 www.irf.com ? 2013 international rectifier may 20, 2013 fig 1. typical output characteristics fig 4. normalized on - resistance vs. temperature fig 5. typical capacitance vs. drain - to - source voltage fig 6. typical gate charge vs. gate - to - source voltage fig 3. typical transfer characteristics fig 2. typical output characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , drain-to-source current (a) ? 60s pulse width tj = 25c 2.5v vgs top 10v 5.0v 4.5v 4.0v 3.5v 3.3v 2.8v bottom 2.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , drain-to-source current (a) ? 60s pulse width tj = 150c 2.5v vgs top 10v 5.0v 4.5v 4.0v 3.5v 3.3v 2.8v bottom 2.5v 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , drain-to-source current (a) t j = 25c t j = 150c v ds = 15v ? 60s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 r ds(on) , drain-to-source on resistance (normalized) i d = 50a v gs = 10v 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c, capacitance (pf) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds short ed c rss = c gd c oss = c ds + c gd 0 10 20 30 40 50 60 70 q g total gate charge (nc) 0 2 4 6 8 10 12 14 v gs , gate-to-source voltage (v) v ds = 20v v ds = 13v v ds= 5.0v i d = 50a downloaded from: http:///
IRFH4213Dpbf 4 www.irf.com ? 2013 international rectifier may 20, 2013 fig 8. maximum safe operating area fig 7. typical source - drain diode forward voltage fig 9. maximum drain current vs. case temperature fig 10. threshold voltage vs. temperature fig 11. maximum effective transient thermal impedance, junction - to - case 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i sd , reverse drain current (a) t j = 25c t j = 150c v gs = 0v 25 50 75 100 125 150 t c , case temperature (c) 0 40 80 120 160 200 240 i d , drain current (a) limited by package 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 thermal response ( z thjc ) c/w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 0.1 1 10 100 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , drain-to-source current (a) tc = 25c tj = 150c single pulse 1msec 10msec 100sec dc l imited by package operation in this area limited by r ds (on) -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.0 0.5 1.0 1.5 2.0 2.5 v gs (th) gate threshold voltage (v) i d = 100a i d = 250a i d = 1.0ma i d = 10ma i d = 1.0a downloaded from: http:///
IRFH4213Dpbf 5 www.irf.com ? 2013 international rectifier may 20, 2013 fig 12. on C resistance vs. gate voltage fig 13. maximum avalanche energy vs. drain current fig 14. typical avalanche current vs. pulsewidth 25 50 75 100 125 150 starting t j , junction temperature (c) 0 200 400 600 800 e as, single pulse avalanche energy (mj) i d t op 13a 26a bott om 50a 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 1000 avalanche current (a) allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 125c. allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 125c and tstart =25c (single pulse) 0 4 8 12 16 20 v gs , gate-to-source voltage (v) 0 1 2 3 4 5 6 r ds (on), drain-to -source on resistance ( m ? ) t j = 25c t j = 125c i d = 50a downloaded from: http:///
IRFH4213Dpbf 6 www.irf.com ? 2013 international rectifier may 20, 2013 fig 15. peak diode recovery dv/dt test circuit for n - channel hexfet ? power mosfets fig 18. gate charge test circuit v ds v gs id v gs(th) q gs1 q gs2 q gd q godr fig 19. gate charge waveform fig 17a. switching time test circuit fig 17b. switching time waveforms fig 16a. unclamped inductive test circuit r g i a s 0 .0 1 ? t p d .u .t l v d s + - v d d d r iv e r a 1 5 v 2 0 v t p v (b r ) d s s i a s fig 16b. unclamped inductive waveforms downloaded from: http:///
IRFH4213Dpbf 7 www.irf.com ? 2013 international rectifier may 20, 2013 note: for the most current drawing please refer to ir website at http://www.irf.com/package/ pqfn 5x6 outline "b" package details xxxx xywwx xxxxx international rectifier logo part number (4 or 5 digits) marking code (per marking spec) assembly site code (per scop 200-002) date code pin 1 identifier lot code (eng mode - min last 4 digits of eati#) (prod mode - 4 digits of spn code) pqfn 5x6 outline "b" part marking for more information on board mounting, including footprint and stencil recommendation, please refer to application note an - 1136: http://www.irf.com/technical - info/appnotes/an - 1136.pdf for more information on package inspection techniques, please refer to application note an - 1154: http://www.irf.com/technical - info/appnotes/an - 1154.pdf downloaded from: http:///
IRFH4213Dpbf 8 www.irf.com ? 2013 international rectifier may 20, 2013 ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto - call/ cl pqfn 5x6 outline "b" tape and reel ? qualification standards can be found at international rectifiers web site: http://www.irf.com/product - info/reliability ?? applicable version of jedec standard at the time of product release. notes: ? repeiie aig; pulse idth liited a. juio tepeatue. ? staig t j = c, l = .7h, r g = ? , i as = a. ? pulse idth ? s; dut le ? %. ? r ? is easued at t j of appoiatel 9c. ? whe outed o ih suae pcb fr - . please efe to an - 99 fo oe details: htp://.if.o/tehial - ifo/appotes/a - 99.pdf ? calulated oiuous uet ased o aiu alloale juio tepeatue. ? cuet is liited to a soue odig teholog. qualification information ? qualification level industrial (per jedec jesd47f ?? guidelines) moisture sensitivity level pqfn 5mm x 6mm msl1 (per jedec j - std - 020d ??) rohs compliant yes revision history date comments 05/20/2013 ? updated package 3d drawing, on page 1. ? added continuous drain current limited by source bonding technology, on page 1. ? divided note 6 into note 6 & 7, on page 8. 04/10/2013 ? release of final data sheet. downloaded from: http:///
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